射频磁控溅射法制备N掺杂β-Ga2O3薄膜的光学特性

在不同氨分压比(0～30％)下,用射频磁控溅射法在玻璃和硅衬底上制备了N掺杂β-Ga2O3薄膜.研究了氨分压比和退火对薄膜光学和结构特性的影响.N掺杂β-Ga2O3薄膜的微结构、光学透过率、光学吸收和光学带隙随着氨分压比的增加发生了显著变化.观察到了绿光、蓝光和紫外发光带,并对每个发光带进行了讨论.     

冷原子介质中基于相干诱导高反射带和高透射带的全光路由控制

以相干诱导光子带隙结构为工作基础,提出了一种可对两个弱光信号的传播路径同时进行动态调控的新型全光路由控制方案。利用描述光波在空间周期介质中相干散射的传输矩阵理论,结合描述单频激光与多能级原子共振相互作用的密度矩阵方程,计算了作为控制媒介的相干驱动超冷原子系综的稳态反射光谱和稳态透射光谱。结果表明,通过改变两个较强相干激光的空间模式、强度和频率等参数,可在探测跃迁共振频率附近建立反射率约为95%或者透射率约为95%的两个特殊频带。对这样的相干诱导高反射带和高透射带进行了实时动态调控,可根据需要引导两个不同频率的弱光信号进入指定的网络通道。该方案很好地满足了在量子信息处理领域对弱光信号进行全光路由控制时的低损耗和低形变要求。     

大带隙二维三角格子光子晶体结构参数的优化设计

光子晶体结构设计优化是理论研究的一个重要内容.运用平面波展开法对圆柱、方柱及正六边柱构造的二维三角格子光子晶体的禁带进行仿真计算,讨论了介质材料分别为GaAs、Si和Ge情况下,柱子形状、旋转角度、填充比的变化对完全光子禁带的影响.发现:对于二维三角格子光子晶体,相对于介质柱,空气柱更易获得完全光子禁带;而相对于圆柱及...     

带有乘右适当断面的右主投射半群(英文)

In this paper,the concept of right adequate transversals of rpp semigroups is introduced.We establish the structure of rpp semigroups with multiplicative right adequate transversals in terms of right normal bands and right adequate semigroups.In particular, some special cases are considered.     

全序幂等元剩余格

研究了全序幂等元剩余格,给出了全序幂等元剩余格的另一种新的构造方法,并且得到了这类剩余格的结构定理,推广了相关文献的结论．     

具有带状系数矩阵的无限维线性规划的解法

研究一类每个约束条件有两个变量且每个变量出现在两个约束条件中的无限维线性规划.引入松弛变量后,得到约束方程组的系数矩阵为无限阶带状矩阵,用它的左逆以及属于零的特征向量可以表示这类问题的最优解.获得目标函数值收敛的一个充分条件.     

Energy bands: Chern numbers and symmetry

Energy bands formed by rotation–vibrational states of molecules in the presence of symmetry and their qualitative modifications under variation of some control parameters are studied within the semi-quantum model. Rotational variables are treated as classical whereas a finite set of vibrational states is considered as quantum. In the two-state approximation the system is described in terms of a fiber bundle with the base space being a two-dimensional sphere, the classical phase space for rotational variables. Generically this rank 2 complex vector bundle can be decomposed into two complex line bundles characterized by a topological invariant, the first Chern class. A general method of explicit calculation of Chern classes and of their possible modifications under variation of control parameters in the presence of symmetry is suggested. The construction of iso-Chern diagrams which split the space of control parameters into connected domains with fixed Chern numbers is suggested. A detailed analysis of the rovibrational model Hamiltonian for a D₃ invariant molecule possessing two vibrational states transforming according to the two-dimensional irreducible representation is done to illustrate non-trivial restrictions imposed by symmetry on possible values of Chern classes.     

新型高效太阳能电池研究进展

第三代太阳能电池以超高效率、薄膜化、低成本为主要目标,目前发展起来的有多结叠层太阳能电池、中间带太阳能电池、多激子产生太阳能电池、热载流子太阳能电池和热光伏太阳能电池等.文章简要介绍了以上几种新型太阳能电池的工作原理和最新进展,并对其发展前景作了分析和预测.     

The effect of crystal lattice distortions on the electronic band structure and optical properties of the N,V- and N,Na-doped anatase

The crystal structure, energy band structure and optical absorption of the N,V-doped and N,Na-doped anatase are studied by means of the first-principle pseudo-potential plane wave and linear muffin-tin orbitals methods. We show that the nitrogen and vanadium atoms have a tendency to form covalently bonded pairs. The crystal lattice distortions associated with doping essentially affect the optical absorption. With doping the impurity bands emerge in the band gap of the host anatase, however, a noticeable increase of optical absorption takes place at the energy only above 3 eV. Possible impact of this effect on the photocatalytic activity of the doped anatase is outlined.     

First principles lattice dynamical calculation of semiboride Be2B and its ternary alloys XBeB (X=Na, Mg, Al)

We present results of first principles total energy calculations of the structure, electronic and lattice dynamics for beryllium semiboride and its three ternary alloys using generalized gradient and local density approximations under the framework of density functional theory. The generalized gradient approximation is used for all compounds except MgBeB using the Perdew-Burke-Ernzehorf exchange correlation functional while local density approximations use the Perdew-Zunger ultrasoft exchange correlation functional. The calculated ground state structural parameters are in good agreement with those of experimental and previous theoretical studies. The electronic band structure calculations show that Be₂B may transform to a semiconductor after Al substitution. A linear response approach to density functional theory is used to calculate phonon dispersion curves and vibrational density of states. The phonon dispersion curves of Be₂B and AlBeB are positive indicating a dynamical stablility of the structure for these compounds. The phonon dispersion curves of NaBeB and MgBeB show the imaginary phonons throughout the Brillouin zone, which confirms dynamical instability as indicated in band structures for these alloys. We also present the partial phonon density of states for different species of Be₂B and AlBeB to bring out the details of the participation of different atoms in the total phonon density of state, particularly the role played by Al atom. The first time calculated phonon properties are clearly able to bring out the significant effect of isoelectronic substitution in Be₂B.